PART |
Description |
Maker |
GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
PTVA104501EH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFB181702FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTAB182002FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFA261301E PTFA261301F |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
PTF240101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
|
Infineon Technologies AG
|
PTFA260851E PTFA260851F |
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 鈥?2700 MHz
|
Infineon Technologies AG
|
PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
PTFA071701E PTFA071701F |
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 ?770 MHz
|
Infineon Technologies AG
|
PTVA084007NF |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ?805 MHz
|
Cree, Inc
|
PTFA041501HL PTFA041501GL09 |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420-500 MHz
|
Infineon Technologies AG
|
PTFA211801E PTFA211801E11 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz
|
Infineon Technologies AG
|